Theoretical and experimental investigations of the temperature dependent continuous wave lasing characteristics and the switch-on dynamics of an InAs/InGaAs quantum-dot semiconductor laser
Identifieur interne : 003674 ( Main/Repository ); précédent : 003673; suivant : 003675Theoretical and experimental investigations of the temperature dependent continuous wave lasing characteristics and the switch-on dynamics of an InAs/InGaAs quantum-dot semiconductor laser
Auteurs : RBID : Pascal:10-0509136Descripteurs français
- Pascal (Inist)
- Courant injection, Etat excité, Commutation gain, Recombinaison non radiative, Laser semiconducteur, Laser point quantique, Système dynamique, Dépendance température, Résolution temporelle, Etat fondamental, Largeur raie, Point quantique, Composé ternaire, Gallium Arséniure, Indium Arséniure, Composé binaire, InAs/InGaAs, InGaAs, InAs, As Ga In, As In, 4255P, Equation bilan transfert énergie.
English descriptors
- KwdEn :
- Binary compounds, Dynamical systems, Excited states, Gain switching, Gallium Arsenides, Ground states, Indium Arsenides, Injection current, Line widths, Non radiative recombination, Quantum dot lasers, Quantum dots, Rate equation, Semiconductor lasers, Temperature dependence, Ternary compounds, Time resolution.
Abstract
We investigate spectrally resolved continuous wave (CW) and spectrally and time-resolved switch-on emission properties of an InAs/InGaAs quantum-dot laser. The temperature and injection current dependence of the excited-state and ground-state emission dynamics is studied in the range between 20 °C and 50 °C under CW and gain-switching operation. All the experimental results are found to be in good agreement with simulation results based on a multi-population rate equation model incorporating all of the peculiar properties of the quantum-dot material as homogeneous and inhomogeneous broadening of the emission linewidth, different dynamics for electrons and holes, cascaded and direct capture paths of carriers from the wetting layer into the dot and Auger non-radiative recombination. This coincidence between simulations and experiments allows explaining the complicated behavior of the CW characteristics and the switch-on dynamics in the investigated temperature range.
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<record><TEI><teiHeader><fileDesc><titleStmt><title xml:lang="en" level="a">Theoretical and experimental investigations of the temperature dependent continuous wave lasing characteristics and the switch-on dynamics of an InAs/InGaAs quantum-dot semiconductor laser</title><author><name sortKey="Drzewietzki, Lukas" uniqKey="Drzewietzki L">Lukas Drzewietzki</name><affiliation wicri:level="3"><inist:fA14 i1="01"><s1>Institut für Angewandte Physik, TU Darmstadt, Schloβgartenstr.7</s1><s2>64289 Darmstadt</s2><s3>DEU</s3><sZ>1 aut.</sZ><sZ>4 aut.</sZ><sZ>6 aut.</sZ></inist:fA14><country>Allemagne</country><placeName><region type="land" nuts="1">Hesse (Land)</region><region type="district" nuts="2">District de Darmstadt</region><settlement type="city">Darmstadt</settlement></placeName></affiliation></author><author><name sortKey="The, George A P" uniqKey="The G">George A. P. The</name><affiliation wicri:level="1"><inist:fA14 i1="02"><s1>Dipartimento di Elettronica, Politecnico di Torino, Corso Duca degli Abruzzi 24</s1><s2>10129 Torino</s2><s3>ITA</s3><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>5 aut.</sZ></inist:fA14><country>Italie</country><placeName><settlement type="city">Turin</settlement><region type="région" nuts="2">Piémont</region></placeName></affiliation></author><author><name sortKey="Gioannini, Mariangela" uniqKey="Gioannini M">Mariangela Gioannini</name><affiliation wicri:level="1"><inist:fA14 i1="02"><s1>Dipartimento di Elettronica, Politecnico di Torino, Corso Duca degli Abruzzi 24</s1><s2>10129 Torino</s2><s3>ITA</s3><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>5 aut.</sZ></inist:fA14><country>Italie</country><placeName><settlement type="city">Turin</settlement><region type="région" nuts="2">Piémont</region></placeName></affiliation></author><author><name sortKey="Breuer, Stefan" uniqKey="Breuer S">Stefan Breuer</name><affiliation wicri:level="3"><inist:fA14 i1="01"><s1>Institut für Angewandte Physik, TU Darmstadt, Schloβgartenstr.7</s1><s2>64289 Darmstadt</s2><s3>DEU</s3><sZ>1 aut.</sZ><sZ>4 aut.</sZ><sZ>6 aut.</sZ></inist:fA14><country>Allemagne</country><placeName><region type="land" nuts="1">Hesse (Land)</region><region type="district" nuts="2">District de Darmstadt</region><settlement type="city">Darmstadt</settlement></placeName></affiliation></author><author><name sortKey="Montrosset, Ivo" uniqKey="Montrosset I">Ivo Montrosset</name><affiliation wicri:level="1"><inist:fA14 i1="02"><s1>Dipartimento di Elettronica, Politecnico di Torino, Corso Duca degli Abruzzi 24</s1><s2>10129 Torino</s2><s3>ITA</s3><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>5 aut.</sZ></inist:fA14><country>Italie</country><placeName><settlement type="city">Turin</settlement><region type="région" nuts="2">Piémont</region></placeName></affiliation></author><author><name sortKey="Els Sser, Wolfgang" uniqKey="Els Sser W">Wolfgang Els Sser</name><affiliation wicri:level="3"><inist:fA14 i1="01"><s1>Institut für Angewandte Physik, TU Darmstadt, Schloβgartenstr.7</s1><s2>64289 Darmstadt</s2><s3>DEU</s3><sZ>1 aut.</sZ><sZ>4 aut.</sZ><sZ>6 aut.</sZ></inist:fA14><country>Allemagne</country><placeName><region type="land" nuts="1">Hesse (Land)</region><region type="district" nuts="2">District de Darmstadt</region><settlement type="city">Darmstadt</settlement></placeName></affiliation></author><author><name sortKey="Hopkinson, Mark" uniqKey="Hopkinson M">Mark Hopkinson</name><affiliation wicri:level="1"><inist:fA14 i1="03"><s1>Department of Electronic and Electrical Engineering, University of Sheffield</s1><s2>Sheffield S1 3JD</s2><s3>GBR</s3><sZ>7 aut.</sZ></inist:fA14><country>Royaume-Uni</country><wicri:noRegion>Sheffield S1 3JD</wicri:noRegion></affiliation></author><author><name sortKey="Krakowski, Michel" uniqKey="Krakowski M">Michel Krakowski</name><affiliation wicri:level="3"><inist:fA14 i1="04"><s1>Alcatel-Thales III-V Lab, Route Dèpartementale 128</s1><s2>91767 Palaiseau</s2><s3>FRA</s3><sZ>8 aut.</sZ></inist:fA14><country>France</country><placeName><region type="region" nuts="2">Île-de-France</region><settlement type="city">Palaiseau</settlement></placeName></affiliation></author></titleStmt><publicationStmt><idno type="inist">10-0509136</idno><date when="2010">2010</date><idno type="stanalyst">PASCAL 10-0509136 INIST</idno><idno type="RBID">Pascal:10-0509136</idno><idno type="wicri:Area/Main/Corpus">003A34</idno><idno type="wicri:Area/Main/Repository">003674</idno></publicationStmt><seriesStmt><idno type="ISSN">0030-4018</idno><title level="j" type="abbreviated">Opt. commun.</title><title level="j" type="main">Optics communications</title></seriesStmt></fileDesc><profileDesc><textClass><keywords scheme="KwdEn" xml:lang="en"><term>Binary compounds</term><term>Dynamical systems</term><term>Excited states</term><term>Gain switching</term><term>Gallium Arsenides</term><term>Ground states</term><term>Indium Arsenides</term><term>Injection current</term><term>Line widths</term><term>Non radiative recombination</term><term>Quantum dot lasers</term><term>Quantum dots</term><term>Rate equation</term><term>Semiconductor lasers</term><term>Temperature dependence</term><term>Ternary compounds</term><term>Time resolution</term></keywords><keywords scheme="Pascal" xml:lang="fr"><term>Courant injection</term><term>Etat excité</term><term>Commutation gain</term><term>Recombinaison non radiative</term><term>Laser semiconducteur</term><term>Laser point quantique</term><term>Système dynamique</term><term>Dépendance température</term><term>Résolution temporelle</term><term>Etat fondamental</term><term>Largeur raie</term><term>Point quantique</term><term>Composé ternaire</term><term>Gallium Arséniure</term><term>Indium Arséniure</term><term>Composé binaire</term><term>InAs/InGaAs</term><term>InGaAs</term><term>InAs</term><term>As Ga In</term><term>As In</term><term>4255P</term><term>Equation bilan transfert énergie</term></keywords></textClass></profileDesc></teiHeader><front><div type="abstract" xml:lang="en">We investigate spectrally resolved continuous wave (CW) and spectrally and time-resolved switch-on emission properties of an InAs/InGaAs quantum-dot laser. The temperature and injection current dependence of the excited-state and ground-state emission dynamics is studied in the range between 20 °C and 50 °C under CW and gain-switching operation. All the experimental results are found to be in good agreement with simulation results based on a multi-population rate equation model incorporating all of the peculiar properties of the quantum-dot material as homogeneous and inhomogeneous broadening of the emission linewidth, different dynamics for electrons and holes, cascaded and direct capture paths of carriers from the wetting layer into the dot and Auger non-radiative recombination. This coincidence between simulations and experiments allows explaining the complicated behavior of the CW characteristics and the switch-on dynamics in the investigated temperature range.</div></front></TEI><inist><standard h6="B"><pA><fA01 i1="01" i2="1"><s0>0030-4018</s0></fA01><fA02 i1="01"><s0>OPCOB8</s0></fA02><fA03 i2="1"><s0>Opt. commun.</s0></fA03><fA05><s2>283</s2></fA05><fA06><s2>24</s2></fA06><fA08 i1="01" i2="1" l="ENG"><s1>Theoretical and experimental investigations of the temperature dependent continuous wave lasing characteristics and the switch-on dynamics of an InAs/InGaAs quantum-dot semiconductor laser</s1></fA08><fA11 i1="01" i2="1"><s1>DRZEWIETZKI (Lukas)</s1></fA11><fA11 i1="02" i2="1"><s1>THE (George A. P.)</s1></fA11><fA11 i1="03" i2="1"><s1>GIOANNINI (Mariangela)</s1></fA11><fA11 i1="04" i2="1"><s1>BREUER (Stefan)</s1></fA11><fA11 i1="05" i2="1"><s1>MONTROSSET (Ivo)</s1></fA11><fA11 i1="06" i2="1"><s1>ELSÄSSER (Wolfgang)</s1></fA11><fA11 i1="07" i2="1"><s1>HOPKINSON (Mark)</s1></fA11><fA11 i1="08" i2="1"><s1>KRAKOWSKI (Michel)</s1></fA11><fA14 i1="01"><s1>Institut für Angewandte Physik, TU Darmstadt, Schloβgartenstr.7</s1><s2>64289 Darmstadt</s2><s3>DEU</s3><sZ>1 aut.</sZ><sZ>4 aut.</sZ><sZ>6 aut.</sZ></fA14><fA14 i1="02"><s1>Dipartimento di Elettronica, Politecnico di Torino, Corso Duca degli Abruzzi 24</s1><s2>10129 Torino</s2><s3>ITA</s3><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>5 aut.</sZ></fA14><fA14 i1="03"><s1>Department of Electronic and Electrical Engineering, University of Sheffield</s1><s2>Sheffield S1 3JD</s2><s3>GBR</s3><sZ>7 aut.</sZ></fA14><fA14 i1="04"><s1>Alcatel-Thales III-V Lab, Route Dèpartementale 128</s1><s2>91767 Palaiseau</s2><s3>FRA</s3><sZ>8 aut.</sZ></fA14><fA20><s1>5092-5098</s1></fA20><fA21><s1>2010</s1></fA21><fA23 i1="01"><s0>ENG</s0></fA23><fA43 i1="01"><s1>INIST</s1><s2>14750</s2><s5>354000191395190420</s5></fA43><fA44><s0>0000</s0><s1>© 2010 INIST-CNRS. All rights reserved.</s1></fA44><fA45><s0>31 ref.</s0></fA45><fA47 i1="01" i2="1"><s0>10-0509136</s0></fA47><fA60><s1>P</s1></fA60><fA61><s0>A</s0></fA61><fA64 i1="01" i2="1"><s0>Optics communications</s0></fA64><fA66 i1="01"><s0>NLD</s0></fA66><fC01 i1="01" l="ENG"><s0>We investigate spectrally resolved continuous wave (CW) and spectrally and time-resolved switch-on emission properties of an InAs/InGaAs quantum-dot laser. The temperature and injection current dependence of the excited-state and ground-state emission dynamics is studied in the range between 20 °C and 50 °C under CW and gain-switching operation. All the experimental results are found to be in good agreement with simulation results based on a multi-population rate equation model incorporating all of the peculiar properties of the quantum-dot material as homogeneous and inhomogeneous broadening of the emission linewidth, different dynamics for electrons and holes, cascaded and direct capture paths of carriers from the wetting layer into the dot and Auger non-radiative recombination. This coincidence between simulations and experiments allows explaining the complicated behavior of the CW characteristics and the switch-on dynamics in the investigated temperature range.</s0></fC01><fC02 i1="01" i2="3"><s0>001B40B55P</s0></fC02><fC03 i1="01" i2="X" l="FRE"><s0>Courant injection</s0><s5>03</s5></fC03><fC03 i1="01" i2="X" l="ENG"><s0>Injection current</s0><s5>03</s5></fC03><fC03 i1="01" i2="X" l="SPA"><s0>Corriente inyección</s0><s5>03</s5></fC03><fC03 i1="02" i2="3" l="FRE"><s0>Etat excité</s0><s5>04</s5></fC03><fC03 i1="02" i2="3" l="ENG"><s0>Excited states</s0><s5>04</s5></fC03><fC03 i1="03" i2="3" l="FRE"><s0>Commutation gain</s0><s5>05</s5></fC03><fC03 i1="03" i2="3" l="ENG"><s0>Gain switching</s0><s5>05</s5></fC03><fC03 i1="04" i2="X" l="FRE"><s0>Recombinaison non radiative</s0><s5>06</s5></fC03><fC03 i1="04" i2="X" l="ENG"><s0>Non radiative recombination</s0><s5>06</s5></fC03><fC03 i1="04" i2="X" l="SPA"><s0>Recombinación no radiativa</s0><s5>06</s5></fC03><fC03 i1="05" i2="3" l="FRE"><s0>Laser semiconducteur</s0><s5>11</s5></fC03><fC03 i1="05" i2="3" l="ENG"><s0>Semiconductor lasers</s0><s5>11</s5></fC03><fC03 i1="06" i2="3" l="FRE"><s0>Laser point quantique</s0><s5>12</s5></fC03><fC03 i1="06" i2="3" l="ENG"><s0>Quantum dot lasers</s0><s5>12</s5></fC03><fC03 i1="07" i2="3" l="FRE"><s0>Système dynamique</s0><s5>13</s5></fC03><fC03 i1="07" i2="3" l="ENG"><s0>Dynamical systems</s0><s5>13</s5></fC03><fC03 i1="08" i2="3" l="FRE"><s0>Dépendance température</s0><s5>41</s5></fC03><fC03 i1="08" i2="3" l="ENG"><s0>Temperature dependence</s0><s5>41</s5></fC03><fC03 i1="09" i2="3" l="FRE"><s0>Résolution temporelle</s0><s5>42</s5></fC03><fC03 i1="09" i2="3" l="ENG"><s0>Time resolution</s0><s5>42</s5></fC03><fC03 i1="10" i2="3" l="FRE"><s0>Etat fondamental</s0><s5>43</s5></fC03><fC03 i1="10" i2="3" l="ENG"><s0>Ground states</s0><s5>43</s5></fC03><fC03 i1="11" i2="3" l="FRE"><s0>Largeur raie</s0><s5>44</s5></fC03><fC03 i1="11" i2="3" l="ENG"><s0>Line widths</s0><s5>44</s5></fC03><fC03 i1="12" i2="3" l="FRE"><s0>Point quantique</s0><s5>47</s5></fC03><fC03 i1="12" i2="3" l="ENG"><s0>Quantum dots</s0><s5>47</s5></fC03><fC03 i1="13" i2="3" l="FRE"><s0>Composé ternaire</s0><s5>50</s5></fC03><fC03 i1="13" i2="3" l="ENG"><s0>Ternary compounds</s0><s5>50</s5></fC03><fC03 i1="14" i2="3" l="FRE"><s0>Gallium Arséniure</s0><s2>NC</s2><s2>NA</s2><s5>51</s5></fC03><fC03 i1="14" i2="3" l="ENG"><s0>Gallium Arsenides</s0><s2>NC</s2><s2>NA</s2><s5>51</s5></fC03><fC03 i1="15" i2="3" l="FRE"><s0>Indium Arséniure</s0><s2>NC</s2><s2>NA</s2><s5>52</s5></fC03><fC03 i1="15" i2="3" l="ENG"><s0>Indium Arsenides</s0><s2>NC</s2><s2>NA</s2><s5>52</s5></fC03><fC03 i1="16" i2="3" l="FRE"><s0>Composé binaire</s0><s5>53</s5></fC03><fC03 i1="16" i2="3" l="ENG"><s0>Binary compounds</s0><s5>53</s5></fC03><fC03 i1="17" i2="3" l="FRE"><s0>InAs/InGaAs</s0><s4>INC</s4><s5>71</s5></fC03><fC03 i1="18" i2="3" l="FRE"><s0>InGaAs</s0><s4>INC</s4><s5>75</s5></fC03><fC03 i1="19" i2="3" l="FRE"><s0>InAs</s0><s4>INC</s4><s5>76</s5></fC03><fC03 i1="20" i2="3" l="FRE"><s0>As Ga In</s0><s4>INC</s4><s5>77</s5></fC03><fC03 i1="21" i2="3" l="FRE"><s0>As In</s0><s4>INC</s4><s5>78</s5></fC03><fC03 i1="22" i2="3" l="FRE"><s0>4255P</s0><s4>INC</s4><s5>91</s5></fC03><fC03 i1="23" i2="3" l="FRE"><s0>Equation bilan transfert énergie</s0><s4>CD</s4><s5>96</s5></fC03><fC03 i1="23" i2="3" l="ENG"><s0>Rate equation</s0><s4>CD</s4><s5>96</s5></fC03><fN21><s1>341</s1></fN21><fN44 i1="01"><s1>OTO</s1></fN44><fN82><s1>OTO</s1></fN82></pA></standard></inist></record>Pour manipuler ce document sous Unix (Dilib)
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